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Qualcomm Snapdragon 8 Gen 3 Chipset’s Key Specs Leaked: All Particulars

Qualcomm’s Snapdragon 8 Gen 2 SoC is the newest and the corporate’s strongest chipset. It has been utilized in among the new high-end smartphones lately, such because the OnePlus 11 5G, iQoo 11 5G and the a lot talked about Samsung Galaxy S23 collection. In line with current leaks, the important thing specs of the upcoming Qualcomm Snapdragon 8 Gen 3 SoC have been revealed. The brand new chipset is predicted to supply vital enhancements over its predecessor, the Snapdragon 8 Gen 2, when it comes to processing energy, graphics capabilities, and vitality effectivity.

In line with a leak by RGcloudS (@RGcloudS), Qualcomm will launch the Snapdragon 8 Gen 3 chipset with the identical CPU structure because the Snapdragon 8 Gen 2, which has the 1+4+3 configuration. Now, in line with a brand new report, the corporate is rising the variety of efficiency cores whereas sacrificing an effectivity core with a brand new 1+5+2 configuration.

Leaker Revegnus( @Tech_Reve) urged that the Snapdragon 8 Gen 3 chipset is alleged to have a single Cortex-X4 core operating at 3.2 GHz. It’ll have 5 Cortex-A720 cores operating at 3.0 GHz and two Cortex-A520 cores operating at 2.0 GHz. That is much more doubtless, as one other leak predicted that the Snapdragon 8 Gen 3 processor would require all of the efficiency cores it could possibly get to realize 1,930/6,236 factors in Geekbench’s single and multi-core exams.

UFS 4.1 reminiscence, LPDDR5 7,500 MT/s RAM, an Adreno 750 GPU, and a Qualcomm X75 5G modem are among the many different Snapdragon 8 Gen 3 chipset specs. In line with the leak, the Snapdragon 8 Gen 3 shall be constructed on TSMC’s N4P course of node, implying that three generations of Qualcomm flagships shall be locked on what are successfully a number of variations of TSMC’s N5 node.

The massive efficiency enhancements talked about above will doubtless necessitate greater than a minor node development. The Snapdragon 8 Gen 3 is a 3 nm chip anticipated to be produced on both Samsung or TSMC’s cutting-edge node, or on each Samsung and TSMC’s cutting-edge node.

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